050-7264 rev a 8-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. unit volts amps volts watts w/c c amps mj caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. unit volts amps ohms a na volts min typ max 600 35 0.150 250 1000 100 24 APT6015JFVR 600 35 140 30 40 450 3.6 -55 to 150 300 35 50 2500 APT6015JFVR 600v 35a 0.150 ? ? ? ? ? characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 17.5a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (v ds = 480v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) g d s power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? faster switching ? avalanche energy rated ? lower leakage ? popular sot-227 package sot-227 g s s d isotop ? "ul recognized" apt website - http://www.advancedpower.com fredfet power mos v ?
dynamic characteristics APT6015JFVR 050-7264 rev a 8-2003 z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.3 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 4.08mh, r g = 25 ? , peak i l = 35a 2 pulse test: pulse width < 380 s, duty cycle < 2% apt reserves the right to change, without notice, the specifications and information contained herein. source-drain diode ratings and characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -35a) peak diode recovery dv / dt 5 reverse recovery time (i s = -35a, di / dt = 100a/s) reverse recovery charge (i s = -35a, di / dt = 100a/s) peak recovery current (i s = -35a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 35a @ 25c v gs = 15v v dd = 300v i d = 35a @ 25c r g = 1.6 ? min typ max 7500 9000 900 1260 320 480 315 475 45 70 125 190 15 30 13 26 45 70 510 unit pf nc ns min typ max 35 140 1.3 15 t j = 25c 250 t j = 125c 500 t j = 25c 1.6 t j = 125c 5.5 t j = 25c 15 t j = 125c 27 thermal characteristics symbol r jc r ja min typ max 0.28 40 unit c/w characteristic junction to case junction to ambient
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 50 100 150 200 250 300 0 4 8 12 16 20 02468 020406080100 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 APT6015JFVR i d = 17.5a v gs = 10v 100 80 60 40 20 0 1.6 1.4 1.2 1.0 0.8 1.15 1.10 1.05 1.00 0.95 0.90 1.2 1.1 1.0 0.9 0.8 0.7 0.6 100 80 60 40 20 0 100 80 60 40 20 0 40 30 20 10 0 2.5 2.0 1.5 1.0 0.5 0.0 050-7264 rev a 8-2003 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =6v, 7v, 10v & 15v v gs =10v v gs =20v t j = +25c t j = -55c t j = +125c t j = +125c t j = +25c t j = -55c 5.5v 4.5v 5v 4v 5.5v 4.5v 5v 4v v gs =6v, 7v, 10v & 15v normalized to v gs = 10v @ 17.5a
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 600 .01 .1 1 10 50 0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2.0 APT6015JFVR t c =+25c t j =+150c single pulse 200 100 50 10 5 1 .5 .1 20 16 12 8 4 0 050-7264 rev a 8-2003 operation here limited by r ds (on) t j =+150c t j =+25c c rss c oss c iss 30,000 10,000 5,000 1,000 500 100 200 100 50 10 5 1 v ds =300v v ds =480v i d = 35a 10s 1ms 10ms 100ms dc 100s v ds =120v sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * source source terminals are shorted internally. current handling capability is equal for either source terminal. isotop ? is a registered trademark of sgs thomson. "ul recognized" file no. e145592 v isolation , rms voltage (50-60 hz sinusoidal waveform from terminals to mounting base for 1 minute) = 2500 volts minimum apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved.
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